IS46LR32160B-6BLA2
- Mfr.Part #
- IS46LR32160B-6BLA2
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 90-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 90TFBGA
- Stock
- 45,866
- In Stock :
- 45,866
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- HTS Code :
- 8542.32.00.28
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Standby Current-Max :
- 0.00001A
- Supply Current-Max :
- 0.13mA
- Number of Ports :
- 1
- Package / Case :
- 90-TFBGA
- Pbfree Code :
- yes
- Access Time :
- 5.5ns
- Voltage - Supply :
- 1.7V~1.95V
- Output Characteristics :
- 3-STATE
- Length :
- 13mm
- Number of Terminations :
- 90
- Data Bus Width :
- 32b
- Memory Interface :
- Parallel
- Terminal Finish :
- TIN SILVER COPPER
- Supply Voltage-Min (Vsup) :
- 1.7V
- Sequential Burst Length :
- 24816
- Address Bus Width :
- 15b
- Factory Lead Time :
- 14 Weeks
- Number of Pins :
- 90
- Interleaved Burst Length :
- 24816
- Refresh Cycles :
- 8192
- Memory Width :
- 32
- Supply Voltage-Max (Vsup) :
- 1.95V
- Supply Voltage :
- 1.8V
- Operating Supply Voltage :
- 1.8V
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Clock Frequency :
- 166MHz
- Number of Functions :
- 1
- I/O Type :
- COMMON
- Additional Feature :
- AUTO/SELF REFRESH
- JESD-609 Code :
- e1
- Surface Mount :
- yes
- Height Seated (Max) :
- 1.2mm
- Memory Format :
- DRAM
- Pin Count :
- 90
- Write Cycle Time - Word, Page :
- 12ns
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Terminal Pitch :
- 0.8mm
- Density :
- 512 Mb
- Operating Temperature :
- -40°C~105°C TA
- Radiation Hardening :
- No
- Memory Type :
- Volatile
- Memory Size :
- 512Mb 16M x 32
- Organization :
- 16MX32
- Packaging :
- Tray
- Datasheets
- IS46LR32160B-6BLA2
Memory Integrated Silicon Solution, Inc. IS46LR32160B-6BLA2 Overview
Introducing the IS46LR32160B-6BLA2 from Integrated Silicon Solution, Inc. (ISSI), a high-performance 512Mbit DRAM component engineered for demanding applications where large volume, high speed data processing is crucial. This memory module utilizes a parallel interface and is housed in a compact 90TFBGA package, making it ideal for streamlined integration into a variety of sophisticated electronic systems. The Memory Integrated Silicon Solution, Inc. IS46LR32160B-6BLA2 offers a robust solution designed to meet the increasing demands of advanced digital technologies, ensuring reliability and efficiency in operation.
IS46LR32160B-6BLA2 Features
The IS46LR32160B-6BLA2 boasts several key features that set it apart in the competitive DRAM market. This 512Mbit memory chip offers a high-speed data transfer rate, and its parallel interface ensures compatibility with a broad range of industrial and commercial applications. The compact 90TFBGA packaging not only saves space but also enhances thermal performance, ensuring stable operation under varying conditions. Additionally, the DRAM module is designed for easy integration, offering flexibility in system design and development.
IS46LR32160B-6BLA2 Applications
- Advanced Computing Systems: Utilized in servers and high-performance computing systems for enhanced data throughput and storage capacity.
- Consumer Electronics: Ideal for integration in consumer electronics such as high-end gaming consoles and sophisticated multimedia systems where speed and capacity are crucial.
- Telecommunications: Serves as a key component in telecommunications infrastructure, supporting the high-speed processing needs of network hardware.
- Automotive Systems: Deployed in automotive electronics where robust memory storage and fast processing are required for advanced vehicle functionalities.
- Industrial Automation: Critical in industrial automation technology, facilitating complex processes that require large-scale data management and real-time processing capabilities.
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