IS25LP016D-JBLE

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Write Cycle Time - Word, Page :

800µs

Package / Case :

8-SOIC (0.209, 5.30mm Width)

Supply Voltage :

3V

Supply Voltage-Min (Vsup) :

2.3V

Number of Terminations :

8

Operating Temperature :

-40°C~105°C TA

Memory Type :

Non-Volatile

Terminal Position :

Dual

Memory Width :

8

Clock Frequency :

133MHz

Peak Reflow Temperature (Cel) :

260

Supply Voltage-Max (Vsup) :

3.6V

Width :

5.28mm

Terminal Finish :

Tin (Sn)

JESD-30 Code :

S-PDSO-G8

Time@Peak Reflow Temperature-Max (s) :

10

Operating Mode :

SYNCHRONOUS

Memory Format :

Flash

JESD-609 Code :

e3

Packaging :

Tube

Mounting Type :

Surface Mount

Parallel/Serial :

Serial

Surface Mount :

yes

Number of Functions :

1

Factory Lead Time :

8 Weeks

Height Seated (Max) :

2.16mm

RoHS Status :

ROHS3 Compliant

Organization :

2MX8

Alternate Memory Width :

1

Voltage - Supply :

2.3V~3.6V

Programming Voltage :

3V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Density :

16777216 bit

Length :

5.28mm

HTS Code :

8542.32.00.51

Pbfree Code :

yes

Terminal Pitch :

1.27mm

Memory Interface :

SPI - Quad I/O, QPI, DTR

Memory Size :

16Mb 2M x 8