IS46DR16128C-3DBLA2

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Density :

2147483648 bit

Supply Voltage-Min (Vsup) :

1.7V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Supply Voltage :

1.8V

Power Supplies :

1.8V

Memory Type :

Volatile

Terminal Pitch :

0.8mm

Interleaved Burst Length :

48

Operating Mode :

SYNCHRONOUS

Width :

8mm

Package / Case :

84-TFBGA

Number of Functions :

1

Supply Current-Max :

0.485mA

Qualification Status :

Not Qualified

Supply Voltage-Max (Vsup) :

1.9V

Memory Size :

2Gb 128M x 16

Refresh Cycles :

8192

Memory Width :

16

I/O Type :

COMMON

Additional Feature :

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

Mounting Type :

Surface Mount

Screening Level :

AEC-Q100

Standby Current-Max :

0.03A

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Voltage - Supply :

1.7V~1.9V

Memory Format :

DRAM

Factory Lead Time :

8 Weeks

Height Seated (Max) :

1.2mm

Number of Terminations :

84

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Write Cycle Time - Word, Page :

15ns

Packaging :

Tray

Organization :

128MX16

Operating Temperature :

-40°C~105°C TA

Sequential Burst Length :

48

Clock Frequency :

333MHz

JESD-30 Code :

R-PBGA-B84

Memory Interface :

Parallel

Number of Ports :

1

Output Characteristics :

3-STATE

Length :

12.5mm

Access Time :

450ps