IS46DR16160B-3DBLA2-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

ECCN Code :

EAR99

Voltage - Supply :

1.7V~1.9V

Length :

12.5mm

Factory Lead Time :

8 Weeks

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Access Time :

450ps

Sequential Burst Length :

48

Number of Functions :

1

I/O Type :

COMMON

Time@Peak Reflow Temperature-Max (s) :

10

Memory Width :

16

Memory Interface :

Parallel

Operating Temperature :

-40°C~105°C TA

Additional Feature :

AUTO/SELF REFRESH

Memory Type :

Volatile

Supply Voltage-Min (Vsup) :

1.7V

Output Characteristics :

3-STATE

Memory Size :

256Mb 16M x 16

Organization :

16MX16

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Peak Reflow Temperature (Cel) :

260

Terminal Pitch :

0.8mm

Height Seated (Max) :

1.2mm

Mounting Type :

Surface Mount

Clock Frequency :

333MHz

Refresh Cycles :

8192

Width :

8mm

Supply Voltage-Max (Vsup) :

1.9V

Memory Format :

DRAM

Standby Current-Max :

0.025A

Surface Mount :

yes

Operating Mode :

SYNCHRONOUS

Interleaved Burst Length :

48

JESD-30 Code :

R-PBGA-B84

Memory Density :

268435456 bit

JESD-609 Code :

e1

Qualification Status :

Not Qualified

Number of Terminations :

84

Package / Case :

84-TFBGA

Write Cycle Time - Word, Page :

15ns

HTS Code :

8542.32.00.24

Number of Ports :

1

Supply Current-Max :

0.28mA

Terminal Position :

BOTTOM

Supply Voltage :

1.8V

Power Supplies :

1.8V