IS46DR16160B-3DBLA1-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Output Characteristics :

3-STATE

Memory Interface :

Parallel

Mounting Type :

Surface Mount

Standby Current-Max :

0.025A

Supply Current-Max :

0.28mA

Memory Width :

16

Factory Lead Time :

8 Weeks

Write Cycle Time - Word, Page :

15ns

RoHS Status :

ROHS3 Compliant

Access Time :

450ps

I/O Type :

COMMON

Terminal Pitch :

0.8mm

Surface Mount :

yes

Number of Terminations :

84

Power Supplies :

1.8V

Operating Temperature :

-40°C~85°C TA

Memory Size :

256Mb 16M x 16

Package / Case :

84-TFBGA

JESD-30 Code :

R-PBGA-B84

Voltage - Supply :

1.7V~1.9V

Memory Density :

268435456 bit

Supply Voltage :

1.8V

Interleaved Burst Length :

48

Refresh Cycles :

8192

Memory Format :

DRAM

Organization :

16MX16

Qualification Status :

Not Qualified

Clock Frequency :

333MHz

Packaging :

Tape and Reel (TR)

Sequential Burst Length :

48

Terminal Position :

BOTTOM

Memory Type :

Volatile

Moisture Sensitivity Level (MSL) :

3 (168 Hours)