IS46DR16160B-3DBLA2

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Max Supply Current :

120mA

Packaging :

Tray

Memory Format :

DRAM

Supply Voltage-Max (Vsup) :

1.9V

Operating Supply Voltage :

1.8V

Data Bus Width :

16b

Address Bus Width :

15b

RoHS Status :

ROHS3 Compliant

Height Seated (Max) :

1.2mm

Operating Temperature :

-40°C~105°C TA

Number of Functions :

1

Memory Type :

Volatile

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Finish :

TIN SILVER COPPER

Write Cycle Time - Word, Page :

15ns

Supply Voltage :

1.8V

Mount :

Surface Mount

Access Time :

450ps

Nominal Supply Current :

280mA

Clock Frequency :

333MHz

Terminal Pitch :

0.8mm

JESD-609 Code :

e1

Density :

256 Mb

Mounting Type :

Surface Mount

Length :

12.5mm

Organization :

16MX16

Factory Lead Time :

8 Weeks

Memory Interface :

Parallel

Number of Ports :

1

Number of Pins :

84

ECCN Code :

EAR99

Additional Feature :

AUTO/SELF REFRESH

HTS Code :

8542.32.00.24

Memory Width :

16

Supply Voltage-Min (Vsup) :

1.7V

Package / Case :

84-TFBGA

Operating Mode :

SYNCHRONOUS

Voltage - Supply :

1.7V~1.9V

Memory Size :

256Mb 16M x 16

Number of Terminations :

84