IS46DR16160B-3DBLA2

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Write Cycle Time - Word, Page :

15ns

Access Time :

450ps

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Memory Type :

Volatile

Memory Format :

DRAM

Operating Supply Voltage :

1.8V

Density :

256 Mb

HTS Code :

8542.32.00.24

Organization :

16MX16

Operating Mode :

SYNCHRONOUS

Terminal Pitch :

0.8mm

Terminal Position :

BOTTOM

Data Bus Width :

16b

Voltage - Supply :

1.7V~1.9V

Time@Peak Reflow Temperature-Max (s) :

10

Height Seated (Max) :

1.2mm

JESD-609 Code :

e1

Mount :

Surface Mount

Number of Ports :

1

Operating Temperature :

-40°C~105°C TA

Additional Feature :

AUTO/SELF REFRESH

Max Supply Current :

120mA

Address Bus Width :

15b

ECCN Code :

EAR99

Number of Pins :

84

Memory Width :

16

Package / Case :

84-TFBGA

Memory Interface :

Parallel

Supply Voltage :

1.8V

Nominal Supply Current :

280mA

Terminal Finish :

TIN SILVER COPPER

Supply Voltage-Min (Vsup) :

1.7V

Peak Reflow Temperature (Cel) :

260

Length :

12.5mm

Number of Functions :

1

Supply Voltage-Max (Vsup) :

1.9V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Packaging :

Tray

Factory Lead Time :

8 Weeks

Clock Frequency :

333MHz

Number of Terminations :

84

Memory Size :

256Mb 16M x 16