IS46DR16160B-3DBLA2

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Organization :

16MX16

Data Bus Width :

16b

Memory Size :

256Mb 16M x 16

Supply Voltage-Min (Vsup) :

1.7V

RoHS Status :

ROHS3 Compliant

Access Time :

450ps

Peak Reflow Temperature (Cel) :

260

HTS Code :

8542.32.00.24

Clock Frequency :

333MHz

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Pitch :

0.8mm

Density :

256 Mb

Memory Type :

Volatile

Packaging :

Tray

Number of Functions :

1

Mount :

Surface Mount

Voltage - Supply :

1.7V~1.9V

Additional Feature :

AUTO/SELF REFRESH

Operating Temperature :

-40°C~105°C TA

Supply Voltage-Max (Vsup) :

1.9V

Memory Interface :

Parallel

JESD-609 Code :

e1

Max Supply Current :

120mA

Operating Mode :

SYNCHRONOUS

Nominal Supply Current :

280mA

Number of Pins :

84

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage :

1.8V

Height Seated (Max) :

1.2mm

Memory Format :

DRAM

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

Memory Width :

16

Address Bus Width :

15b

Mounting Type :

Surface Mount

Package / Case :

84-TFBGA

Number of Ports :

1

Write Cycle Time - Word, Page :

15ns

Terminal Position :

BOTTOM

Terminal Finish :

TIN SILVER COPPER

Operating Supply Voltage :

1.8V

Length :

12.5mm

Number of Terminations :

84