IS46DR16160B-3DBLA2

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Operating Supply Voltage :

1.8V

Density :

256 Mb

Max Supply Current :

120mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

260

Operating Mode :

SYNCHRONOUS

Memory Size :

256Mb 16M x 16

Terminal Finish :

TIN SILVER COPPER

Number of Pins :

84

ECCN Code :

EAR99

Memory Type :

Volatile

Factory Lead Time :

8 Weeks

Operating Temperature :

-40°C~105°C TA

JESD-609 Code :

e1

Additional Feature :

AUTO/SELF REFRESH

Memory Width :

16

Write Cycle Time - Word, Page :

15ns

Packaging :

Tray

RoHS Status :

ROHS3 Compliant

Access Time :

450ps

Clock Frequency :

333MHz

Number of Ports :

1

Supply Voltage :

1.8V

Address Bus Width :

15b

Memory Interface :

Parallel

Memory Format :

DRAM

Height Seated (Max) :

1.2mm

Terminal Position :

BOTTOM

Nominal Supply Current :

280mA

HTS Code :

8542.32.00.24

Voltage - Supply :

1.7V~1.9V

Length :

12.5mm

Supply Voltage-Max (Vsup) :

1.9V

Supply Voltage-Min (Vsup) :

1.7V

Time@Peak Reflow Temperature-Max (s) :

10

Mount :

Surface Mount

Terminal Pitch :

0.8mm

Package / Case :

84-TFBGA

Data Bus Width :

16b

Organization :

16MX16

Number of Functions :

1

Number of Terminations :

84

Mounting Type :

Surface Mount