IS46DR81280B-3DBLA2-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Write Cycle Time - Word, Page :

15ns

Access Time :

450ps

Output Characteristics :

3-STATE

Refresh Cycles :

8192

Power Supplies :

1.8V

Memory Type :

Volatile

Operating Temperature :

-40°C~105°C TA

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Position :

BOTTOM

RoHS Status :

ROHS3 Compliant

Interleaved Burst Length :

48

Organization :

128MX8

Voltage - Supply :

1.7V~1.9V

Sequential Burst Length :

48

I/O Type :

COMMON

Memory Density :

1073741824 bit

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Number of Terminations :

60

Supply Current-Max :

0.27mA

Memory Format :

DRAM

Memory Size :

1Gb 128M x 8

JESD-30 Code :

R-PBGA-B60

Screening Level :

AEC-Q100

Memory Width :

8

Terminal Pitch :

0.8mm

Max Frequency :

333MHz

Data Bus Width :

8B

Surface Mount :

yes

Memory Interface :

Parallel

Package / Case :

60-TFBGA

Supply Voltage :

1.8V