IS46DR81280B-3DBLA2

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Position :

BOTTOM

Address Bus Width :

17b

RoHS Status :

ROHS3 Compliant

Organization :

64MX16

Voltage - Supply :

1.7V~1.9V

Nominal Supply Current :

220mA

Sequential Burst Length :

48

Number of Terminations :

84

Interleaved Burst Length :

48

Screening Level :

AEC-Q100

Mounting Type :

Surface Mount

Length :

12.5mm

Write Cycle Time - Word, Page :

15ns

ECCN Code :

EAR99

Terminal Pitch :

0.8mm

Additional Feature :

AUTO/SELF REFRESH

Package / Case :

60-TFBGA

Memory Type :

Volatile

Refresh Cycles :

8192

JESD-30 Code :

R-PBGA-B84

Memory Interface :

Parallel

Memory Width :

16

Supply Voltage :

1.8V

Data Bus Width :

8B

Number of Ports :

1

Number of Pins :

60

Operating Supply Voltage :

1.8V

Packaging :

Tray

Supply Voltage-Min (Vsup) :

1.7V

Height Seated (Max) :

1.2mm

Number of Functions :

1

Output Characteristics :

3-STATE

Memory Size :

1Gb 128M x 8

Qualification Status :

Not Qualified

HTS Code :

8542.32.00.32

I/O Type :

COMMON

Memory Format :

DRAM

Operating Mode :

SYNCHRONOUS

Supply Voltage-Max (Vsup) :

1.9V

Operating Temperature :

-40°C~105°C TA

Access Time :

450ps

Max Frequency :

333MHz

Density :

1 Gb

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)