IS46DR16640B-3DBLA2-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Position :

BOTTOM

Refresh Cycles :

8192

Supply Voltage-Max (Vsup) :

1.9V

Number of Ports :

1

Write Cycle Time - Word, Page :

15ns

Data Bus Width :

16b

Power Supplies :

1.8V

Additional Feature :

AUTO/SELF REFRESH

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Terminations :

84

Terminal Finish :

TIN SILVER COPPER

Standby Current-Max :

0.015A

Memory Density :

1073741824 bit

Memory Format :

DRAM

Terminal Pitch :

0.8mm

ECCN Code :

EAR99

Memory Type :

Volatile

Number of Functions :

1

HTS Code :

8542.32.00.32

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-40°C~105°C TA

Organization :

64MX16

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

I/O Type :

COMMON

Memory Width :

16

Operating Mode :

SYNCHRONOUS

Length :

12.5mm

Supply Voltage :

1.8V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Memory Interface :

Parallel

JESD-609 Code :

e1

Number of Pins :

84

Mounting Type :

Surface Mount

Output Characteristics :

3-STATE

Interleaved Burst Length :

48

Memory Size :

1Gb 64M x 16

Supply Current-Max :

0.25mA

Clock Frequency :

333MHz

Sequential Burst Length :

48

Screening Level :

AEC-Q100

Package / Case :

84-TFBGA

Voltage - Supply :

1.7V~1.9V

Height Seated (Max) :

1.2mm

Supply Voltage-Min (Vsup) :

1.7V

Access Time :

450ps

Factory Lead Time :

8 Weeks