IS46DR16640B-3DBLA2

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Operating Supply Voltage :

1.8V

ECCN Code :

EAR99

Supply Voltage-Min (Vsup) :

1.7V

Number of Functions :

1

I/O Type :

COMMON

Package / Case :

84-TFBGA

Nominal Supply Current :

220mA

Memory Interface :

Parallel

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage-Max (Vsup) :

1.9V

Output Characteristics :

3-STATE

Number of Terminations :

84

Terminal Position :

BOTTOM

Data Bus Width :

16b

Packaging :

Tray

Interleaved Burst Length :

48

Standby Current-Max :

0.015A

Number of Ports :

1

Screening Level :

AEC-Q100

Voltage - Supply :

1.7V~1.9V

Sequential Burst Length :

48

Height Seated (Max) :

1.2mm

Memory Size :

1Gb 64M x 16

Operating Temperature :

-40°C~105°C TA

Length :

12.5mm

Factory Lead Time :

8 Weeks

Additional Feature :

AUTO/SELF REFRESH

Memory Type :

Volatile

Organization :

64MX16

Number of Pins :

84

RoHS Status :

ROHS3 Compliant

Address Bus Width :

16b

Supply Voltage :

1.8V

Mount :

Surface Mount

Clock Frequency :

333MHz

HTS Code :

8542.32.00.32

Write Cycle Time - Word, Page :

15ns

Terminal Pitch :

0.8mm

Refresh Cycles :

8192

Radiation Hardening :

No

Memory Width :

16

Density :

1 Gb

Mounting Type :

Surface Mount

Memory Format :

DRAM

Access Time :

450ps