IS46DR16640B-3DBLA1-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Interleaved Burst Length :

48

Operating Temperature :

-40°C~85°C TA

Supply Voltage-Min (Vsup) :

1.7V

Data Bus Width :

16b

Terminal Finish :

TIN SILVER COPPER

Supply Voltage :

1.8V

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Output Characteristics :

3-STATE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e1

ECCN Code :

EAR99

HTS Code :

8542.32.00.32

Mounting Type :

Surface Mount

Voltage - Supply :

1.7V~1.9V

Terminal Pitch :

0.8mm

Memory Format :

DRAM

I/O Type :

COMMON

Sequential Burst Length :

48

Organization :

64MX16

Additional Feature :

AUTO/SELF REFRESH

Memory Width :

16

Package / Case :

84-TFBGA

Number of Functions :

1

Access Time :

450ps

Height Seated (Max) :

1.2mm

Power Supplies :

1.8V

Memory Interface :

Parallel

Length :

12.5mm

Memory Density :

1073741824 bit

Standby Current-Max :

0.015A

Qualification Status :

Not Qualified

Factory Lead Time :

8 Weeks

Memory Type :

Volatile

Number of Pins :

84

Screening Level :

AEC-Q100

Refresh Cycles :

8192

Supply Current-Max :

0.25mA

Supply Voltage-Max (Vsup) :

1.9V

Write Cycle Time - Word, Page :

15ns

Clock Frequency :

333MHz

Operating Mode :

SYNCHRONOUS

Number of Ports :

1

Memory Size :

1Gb 64M x 16

Number of Terminations :

84