IS46DR16640B-3DBLA1-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Density :

1073741824 bit

Memory Width :

16

Operating Mode :

SYNCHRONOUS

Terminal Pitch :

0.8mm

Supply Voltage-Min (Vsup) :

1.7V

Memory Size :

1Gb 64M x 16

Power Supplies :

1.8V

Factory Lead Time :

8 Weeks

Qualification Status :

Not Qualified

Operating Temperature :

-40°C~85°C TA

Refresh Cycles :

8192

Standby Current-Max :

0.015A

Organization :

64MX16

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Ports :

1

Output Characteristics :

3-STATE

Screening Level :

AEC-Q100

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Supply Voltage-Max (Vsup) :

1.9V

Data Bus Width :

16b

Terminal Position :

BOTTOM

Number of Pins :

84

Access Time :

450ps

Supply Current-Max :

0.25mA

HTS Code :

8542.32.00.32

Memory Type :

Volatile

Supply Voltage :

1.8V

Memory Interface :

Parallel

Package / Case :

84-TFBGA

Clock Frequency :

333MHz

Additional Feature :

AUTO/SELF REFRESH

Number of Functions :

1

Number of Terminations :

84

Surface Mount :

yes

Length :

12.5mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Voltage - Supply :

1.7V~1.9V

JESD-609 Code :

e1

I/O Type :

COMMON

Mounting Type :

Surface Mount

Terminal Finish :

TIN SILVER COPPER

Interleaved Burst Length :

48

Memory Format :

DRAM

Write Cycle Time - Word, Page :

15ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Sequential Burst Length :

48

Height Seated (Max) :

1.2mm