IS46DR16640B-3DBLA1

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Data Bus Width :

16b

Number of Functions :

1

Voltage - Supply :

1.7V~1.9V

Memory Width :

16

Screening Level :

AEC-Q100

Supply Voltage-Min (Vsup) :

1.7V

Factory Lead Time :

8 Weeks

Length :

12.5mm

ECCN Code :

EAR99

HTS Code :

8542.32.00.32

Density :

1 Gb

Memory Format :

DRAM

RoHS Status :

ROHS3 Compliant

Number of Ports :

1

Lead Free :

Lead Free

Supply Voltage-Max (Vsup) :

1.9V

Memory Interface :

Parallel

Height Seated (Max) :

1.2mm

Refresh Cycles :

8192

Mounting Type :

Surface Mount

Number of Terminations :

84

Access Time :

450ps

Terminal Pitch :

0.8mm

Additional Feature :

AUTO/SELF REFRESH

Operating Supply Voltage :

1.8V

Standby Current-Max :

0.015A

Packaging :

Tray

Sequential Burst Length :

48

Mount :

Surface Mount

Output Characteristics :

3-STATE

Memory Size :

1Gb 64M x 16

I/O Type :

COMMON

Operating Temperature :

-40°C~85°C TA

Memory Type :

Volatile

Organization :

64MX16

Terminal Position :

BOTTOM

Nominal Supply Current :

220mA

Clock Frequency :

333MHz

Write Cycle Time - Word, Page :

15ns

Radiation Hardening :

No

Number of Pins :

84

Package / Case :

84-TFBGA

Address Bus Width :

16b

Interleaved Burst Length :

48

Supply Voltage :

1.8V