IS46DR16640B-3DBLA1

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Packaging :

Tray

Terminal Position :

BOTTOM

Refresh Cycles :

8192

Terminal Pitch :

0.8mm

Height Seated (Max) :

1.2mm

Mount :

Surface Mount

Lead Free :

Lead Free

Supply Voltage-Max (Vsup) :

1.9V

Standby Current-Max :

0.015A

RoHS Status :

ROHS3 Compliant

Number of Terminations :

84

Mounting Type :

Surface Mount

Screening Level :

AEC-Q100

HTS Code :

8542.32.00.32

ECCN Code :

EAR99

Memory Format :

DRAM

Operating Supply Voltage :

1.8V

Address Bus Width :

16b

Nominal Supply Current :

220mA

Package / Case :

84-TFBGA

Number of Pins :

84

Number of Ports :

1

I/O Type :

COMMON

Clock Frequency :

333MHz

Number of Functions :

1

Memory Width :

16

Additional Feature :

AUTO/SELF REFRESH

Density :

1 Gb

Radiation Hardening :

No

Write Cycle Time - Word, Page :

15ns

Memory Size :

1Gb 64M x 16

Supply Voltage :

1.8V

Interleaved Burst Length :

48

Supply Voltage-Min (Vsup) :

1.7V

Memory Interface :

Parallel

Organization :

64MX16

Access Time :

450ps

Factory Lead Time :

8 Weeks

Output Characteristics :

3-STATE

Operating Temperature :

-40°C~85°C TA

Sequential Burst Length :

48

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Voltage - Supply :

1.7V~1.9V

Data Bus Width :

16b

Memory Type :

Volatile

Length :

12.5mm