IS46DR16640B-25DBLA2-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Interleaved Burst Length :

48

Voltage - Supply :

1.7V~1.9V

Organization :

64MX16

Factory Lead Time :

8 Weeks

Data Bus Width :

16b

Memory Type :

Volatile

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Refresh Cycles :

8192

Write Cycle Time - Word, Page :

15ns

Sequential Burst Length :

48

Mounting Type :

Surface Mount

Access Time :

400ps

Packaging :

Tape and Reel (TR)

Screening Level :

AEC-Q100

Package / Case :

84-TFBGA

Terminal Pitch :

0.8mm

Memory Format :

DRAM

Power Supplies :

1.8V

Number of Pins :

84

Qualification Status :

Not Qualified

Operating Temperature :

-40°C~105°C TA

Output Characteristics :

3-STATE

Memory Density :

1073741824 bit

Memory Width :

16

Clock Frequency :

400MHz

Supply Current-Max :

0.27mA

Memory Size :

1Gb 64M x 16

I/O Type :

COMMON

Number of Terminations :

84

Standby Current-Max :

0.015A

RoHS Status :

ROHS3 Compliant

Memory Interface :

Parallel

Terminal Position :

BOTTOM

Supply Voltage :

1.8V

Surface Mount :

yes