IS46DR16320E-3DBLA1

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Mfr.Part #
IS46DR16320E-3DBLA1
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)
Package / Case
84-TFBGA
Datasheet
Download
Description
IC DRAM 512MBIT PARALLEL 84TWBGA
Stock
16,323
In Stock :
16,323

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Manufacturer :
Integrated Silicon Solution, Inc. (ISSI)
Product Category :
Memory
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Packaging :
Tray
Write Cycle Time - Word, Page :
15ns
JESD-30 Code :
R-PBGA-B84
Access Time :
450ps
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Memory Format :
DRAM
Memory Interface :
Parallel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Memory Density :
536870912 bit
Supply Voltage-Max (Vsup) :
1.9V
Number of Ports :
1
Organization :
32MX16
Number of Terminations :
84
Factory Lead Time :
8 Weeks
Additional Feature :
AUTO/SELF REFRESH
Operating Temperature :
-40°C~85°C TA
Clock Frequency :
333MHz
Number of Functions :
1
Memory Size :
512Mb 32M x 16
Length :
10.5mm
Terminal Position :
BOTTOM
Memory Type :
Volatile
Operating Mode :
SYNCHRONOUS
Memory Width :
16
Voltage - Supply :
1.7V~1.9V
Package / Case :
84-TFBGA
Supply Voltage-Min (Vsup) :
1.7V
Supply Voltage :
1.8V
Height Seated (Max) :
1.2mm
Mounting Type :
Surface Mount
Terminal Pitch :
0.8mm
Width :
8mm
Introducing Memory Integrated Silicon Solution, Inc. (ISSI) IS46DR16320E-3DBLA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:84, Operating Temperature:-40°C~85°C TA, Package / Case:84-TFBGA, Mounting Type:Surface Mount, IS46DR16320E-3DBLA1 pinout, IS46DR16320E-3DBLA1 datasheet PDF, IS46DR16320E-3DBLA1 amp .Beyond Memory Integrated Silicon Solution, Inc. (ISSI) IS46DR16320E-3DBLA1 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Integrated Silicon Solution, Inc. (ISSI) IS46DR16320E-3DBLA1


Memory Integrated Silicon Solution, Inc. (ISSI) IS46DR16320E-3DBLA1 Overview

The IS46DR16320E-3DBLA1, manufactured by Integrated Silicon Solution, Inc. (ISSI), is a high-performance 512Mbit DRAM integrated circuit. This memory device is engineered using cutting-edge technology to deliver high-speed data transmission and enhanced reliability in a compact 84TWBGA package. Designed to meet the rigorous demands of sophisticated electronic systems, the Memory Integrated Silicon Solution, Inc. (ISSI) IS46DR16320E-3DBLA1 ensures seamless operation and compatibility with a variety of processing platforms, making it an ideal choice for manufacturers looking to enhance their product with dependable memory solutions.

IS46DR16320E-3DBLA1 Features

The IS46DR16320E-3DBLA1 offers a robust feature set that includes high-density 512Mbit storage capacity and parallel interface for rapid data access and processing. Its compact 84TWBGA package ensures a minimal footprint on system boards, facilitating more efficient layout and design. The device’s low power consumption and high-speed operation are critical for applications requiring efficient memory usage and extended operational lifetimes.

IS46DR16320E-3DBLA1 Applications

  • Automotive Systems: Utilized in advanced driver-assistance systems (ADAS) for data buffering and real-time processing, enhancing vehicle safety and performance.
  • Telecommunication Equipment: Critical for data retention in network routers and switches, ensuring fast and reliable access to information crucial for network stability and speed.
  • Consumer Electronics: Employs in devices such as smart TVs and gaming consoles where high-speed memory is essential for user experience and device functionality.
  • Industrial Automation: Provides the memory capacity needed for complex machine control systems, where precision and reliability are paramount.
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Shipping Method

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Shipping Cost

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