IS46DR16320D-3DBLA1

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JESD-609 Code :

e1

Output Characteristics :

3-STATE

Memory Interface :

Parallel

Interleaved Burst Length :

48

Memory Size :

512Mb 32M x 16

Operating Mode :

SYNCHRONOUS

Factory Lead Time :

8 Weeks

Address Bus Width :

13b

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Refresh Cycles :

8192

Standby Current-Max :

0.025A

Supply Voltage-Max (Vsup) :

1.9V

Surface Mount :

yes

Voltage - Supply :

1.7V~1.9V

Number of Ports :

1

Memory Width :

16

Package / Case :

84-TFBGA

ECCN Code :

EAR99

Clock Frequency :

333MHz

Memory Type :

Volatile

Access Time :

450ps

Additional Feature :

PROGRAMMABLE CAS LATENCY

Supply Voltage-Min (Vsup) :

1.7V

Terminal Position :

BOTTOM

RoHS Status :

ROHS3 Compliant

Memory Format :

DRAM

Mounting Type :

Surface Mount

Write Cycle Time - Word, Page :

15ns

Terminal Pitch :

0.8mm

Packaging :

Tray

I/O Type :

COMMON

Supply Voltage :

1.8V

Operating Supply Voltage :

1.8V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

HTS Code :

8542.32.00.28

Terminal Finish :

TIN SILVER COPPER

Operating Temperature :

-40°C~85°C TA

Qualification Status :

Not Qualified

Number of Terminations :

84

Organization :

32MX16

Number of Functions :

1

Sequential Burst Length :

48

Height Seated (Max) :

1.2mm

Density :

512 Mb

Number of Pins :

84

Supply Current-Max :

0.23mA

Length :

12.5mm