IRLU8256PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

81A Tc

Rds On (Max) @ Id, Vgs :

5.7mOhm @ 25A, 10V

Nominal Vgs :

1.8 V

Vgs (Max) :

±20V

Termination :

Through Hole

Mount :

Through Hole

Recovery Time :

29 ns

Supplier Device Package :

I-PAK

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

12 ns

Power Dissipation-Max :

63W Tc

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Continuous Drain Current (ID) :

81A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

46ns

Packaging :

Tube

Published :

2008

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1470pF @ 13V

Input Capacitance :

1.47nF

Max Operating Temperature :

175°C

Width :

2.3876mm

Fall Time (Typ) :

8.5 ns

Series :

HEXFET®

Number of Pins :

3

Dual Supply Voltage :

25V

RoHS Status :

RoHS Compliant

Height :

6.22mm

Radiation Hardening :

No

Power Dissipation :

63W

FET Type :

N-Channel

Rds On Max :

5.7 mΩ

Drain to Source Breakdown Voltage :

25V

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

9.7 ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Threshold Voltage :

1.8V

Length :

6.7056mm

Drain to Source Voltage (Vdss) :

25V

Drain to Source Resistance :

8.5mOhm