IRLU7833PBF
- Mfr.Part #
- IRLU7833PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 140A I-PAK
- Stock
- 5,692
- In Stock :
- 5,692
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 4.5mOhm @ 15A, 10V
- Lead Free :
- Lead Free
- Power Dissipation :
- 140W
- Current Rating :
- 140A
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Drain to Source Resistance :
- 5.5mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4010pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 4.5V
- Published :
- 2004
- Supplier Device Package :
- I-PAK
- Turn-Off Delay Time :
- 23 ns
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 30V
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- HEXFET®
- Input Capacitance :
- 4.01nF
- Drain to Source Voltage (Vdss) :
- 30V
- Continuous Drain Current (ID) :
- 140A
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mount :
- Through Hole
- Packaging :
- Tube
- Rise Time :
- 6.9ns
- Max Operating Temperature :
- 175°C
- Vgs(th) (Max) @ Id :
- 2.3V @ 250μA
- Power Dissipation-Max :
- 140W Tc
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 30V
- Rds On Max :
- 4.5 mΩ
- Datasheets
- IRLU7833PBF

N-Channel Tube 4.5mOhm @ 15A, 10V ±20V 4010pF @ 15V 50nC @ 4.5V 30V TO-251-3 Short Leads, IPak, TO-251AA
IRLU7833PBF Overview
A device's maximal input capacitance is 4010pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 140A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 23 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 5.5mOhm.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRLU7833PBF Features
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 5.5mOhm
a 30V drain to source voltage (Vdss)
IRLU7833PBF Applications
There are a lot of Infineon Technologies
IRLU7833PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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