IRLU3802PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Radiation Hardening :

No

Turn-Off Delay Time :

21 ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Rise Time :

14ns

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

88W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

84A

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Mounting Type :

Through Hole

Width :

2.3876mm

Case Connection :

DRAIN

Voltage - Rated DC :

12V

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 4.5V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Gate to Source Voltage (Vgs) :

12V

Fall Time (Typ) :

17 ns

Vgs (Max) :

±12V

JESD-609 Code :

e3

Length :

6.7056mm

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2490pF @ 6V

Number of Terminations :

3

FET Type :

N-Channel

Packaging :

Tube

Number of Elements :

1

Power Dissipation :

88W

Turn On Delay Time :

11 ns

Height :

6.22mm

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

84A Tc

Current Rating :

84A

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Series :

HEXFET®

Published :

2004

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 15A, 4.5V

Drain to Source Breakdown Voltage :

12V