IRLU3705Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 5V

DS Breakdown Voltage-Min :

55V

Vgs (Max) :

±16V

JESD-30 Code :

R-PSIP-T3

Published :

2004

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

8m Ω @ 42A, 10V

FET Type :

N-Channel

Terminal Position :

Single

Series :

HEXFET®

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Avalanche Energy Rating (Eas) :

190 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

55V

Pulsed Drain Current-Max (IDM) :

360A

Case Connection :

DRAIN

Power Dissipation-Max :

130W Tc

Drain-source On Resistance-Max :

0.008Ohm

Packaging :

Tube

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

42A