IRLR8259TRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Radiation Hardening :

No

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Width :

6.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Length :

6.7056mm

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Series :

HEXFET®

Turn On Delay Time :

8.4 ns

Number of Pins :

3

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

67 mJ

Number of Terminations :

2

Published :

2004

Drain Current-Max (Abs) (ID) :

42A

Vgs(th) (Max) @ Id :

2.35V @ 25µA

RoHS Status :

ROHS3 Compliant

Rise Time :

38ns

Continuous Drain Current (ID) :

57A

Vgs (Max) :

±20V

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Power Dissipation-Max :

48W Tc

Height :

2.3876mm

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 13V

Fall Time (Typ) :

8.9 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

48W

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 21A, 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Drain-source On Resistance-Max :

0.0087Ohm

Turn-Off Delay Time :

9.1 ns

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

25V

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing