IRLR014NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

140 mΩ

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

55V

Lead Free :

Lead Free

Power Dissipation :

28W

Drain to Source Voltage (Vdss) :

55V

Max Operating Temperature :

175°C

Rds On (Max) @ Id, Vgs :

140mOhm @ 6A, 10V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Turn-Off Delay Time :

12 ns

Voltage - Rated DC :

55V

Continuous Drain Current (ID) :

10A

Mount :

Surface Mount

REACH SVHC :

No SVHC

Dual Supply Voltage :

55V

RoHS Status :

RoHS Compliant

Supplier Device Package :

D-Pak

Element Configuration :

Single

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

1V @ 250μA

Current Rating :

10A

Input Capacitance (Ciss) (Max) @ Vds :

265pF @ 25V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

16V

Published :

2004

Rise Time :

47ns

Gate Charge (Qg) (Max) @ Vgs :

7.9nC @ 5V

Number of Pins :

4

Turn On Delay Time :

6.5 ns

Mounting Type :

Surface Mount

Input Capacitance :

265pF

Threshold Voltage :

1V

FET Type :

N-Channel

Fall Time (Typ) :

23 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

140mOhm

Packaging :

Tube

Nominal Vgs :

1 V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Resistance :

140mOhm

Series :

HEXFET®

Power Dissipation-Max :

28W Tc

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63