IRLR014TR
- Mfr.Part #
- IRLR014TR
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7.7A DPAK
- Stock
- 4,616
- In Stock :
- 4,616
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- RoHS Status :
- Non-RoHS Compliant
- Drain-source On Resistance-Max :
- 0.2Ohm
- Vgs (Max) :
- ±10V
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 10V
- Terminal Finish :
- TIN LEAD
- Number of Pins :
- 3
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 21 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 27.4 mJ
- Fall Time (Typ) :
- 26 ns
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 9.3 ns
- Rise Time :
- 110ns
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- JESD-609 Code :
- e0
- Continuous Drain Current (ID) :
- 7.7A
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 4.6A, 5V
- DS Breakdown Voltage-Min :
- 60V
- Published :
- 2016
- Drain to Source Voltage (Vdss) :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 7.7A Tc
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Pbfree Code :
- No
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 8.4nC @ 5V
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 17 ns
- Peak Reflow Temperature (Cel) :
- 240
- Mount :
- Surface Mount
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Datasheets
- IRLR014TR
N-Channel Tape & Reel (TR) 200m Ω @ 4.6A, 5V ±10V 400pF @ 25V 8.4nC @ 5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR014TR Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 27.4 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 400pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 17 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4V 5V).
IRLR014TR Features
the avalanche energy rating (Eas) is 27.4 mJ
a continuous drain current (ID) of 7.7A
the turn-off delay time is 17 ns
a 60V drain to source voltage (Vdss)
IRLR014TR Applications
There are a lot of Vishay Siliconix
IRLR014TR applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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