IRLR8256PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

9.7 ns

Turn-Off Delay Time :

12 ns

Power Dissipation-Max :

63W Tc

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Contact Plating :

Tin

Number of Pins :

3

Rise Time :

46ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

6.73mm

Input Capacitance (Ciss) (Max) @ Vds :

1470pF @ 13V

Terminal Form :

Gull wing

Fall Time (Typ) :

8.5 ns

Width :

6.22mm

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

81A Tc

Nominal Vgs :

1.8 V

Power Dissipation :

63W

Threshold Voltage :

1.8V

Packaging :

Tube

Resistance :

5.7mOhm

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Series :

HEXFET®

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

86 mJ

JEDEC-95 Code :

TO-252AA

Height :

2.39mm

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 25A, 10V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Transistor Application :

SWITCHING

Termination :

SMD/SMT

Published :

2008

Continuous Drain Current (ID) :

81A

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Recovery Time :

29 ns

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Dual Supply Voltage :

25V

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Mounting Type :

Surface Mount

FET Type :

N-Channel

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

25V

Vgs (Max) :

±20V

Lead Free :

Lead Free