IRLR7833PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

560A

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Terminal Position :

Single

Number of Terminations :

2

Power Dissipation-Max :

140W Tc

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 15A, 10V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

JEDEC-95 Code :

TO-252AA

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

4010pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Avalanche Energy Rating (Eas) :

530 mJ

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

30A

Vgs(th) (Max) @ Id :

2.3V @ 250μA

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Vgs (Max) :

±20V

Number of Elements :

1

Published :

2004

Drain-source On Resistance-Max :

0.0045ohm

DS Breakdown Voltage-Min :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE