IRLR3802PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

1.9 V

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 4.5V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Power Dissipation :

88W

Resistance :

8.5mOhm

Turn-Off Delay Time :

21 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 15A, 4.5V

Height :

2.3876mm

Radiation Hardening :

No

JEDEC-95 Code :

TO-252AA

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Terminal Form :

Gull wing

Threshold Voltage :

1.9V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

88W Tc

Width :

6.22mm

Continuous Drain Current (ID) :

84A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

12V

JESD-609 Code :

e3

Number of Terminations :

2

Current Rating :

84A

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2490pF @ 6V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

84A Tc

Length :

6.7056mm

Vgs (Max) :

±12V

Drain to Source Breakdown Voltage :

12V

Voltage - Rated DC :

12V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

11 ns

Published :

2004

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

30

Dual Supply Voltage :

12V

Case Connection :

DRAIN

Number of Elements :

1

Number of Pins :

3

Transistor Element Material :

SILICON

Series :

HEXFET®

Rise Time :

14ns

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Element Configuration :

Single

Fall Time (Typ) :

17 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier