IRLR3636PBF
- Mfr.Part #
- IRLR3636PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IRLR3636 - 12V-300V N-CHANNEL PO
- Stock
- 53,363
- In Stock :
- 53,363
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 4.5V
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Resistance :
- 6.8mOhm
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Number of Pins :
- 3
- Turn On Delay Time :
- 45 ns
- Gate to Source Voltage (Vgs) :
- 16V
- Height :
- 2.39mm
- Element Configuration :
- Single
- Threshold Voltage :
- 2.5V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 99A
- Vgs(th) (Max) @ Id :
- 2.5V @ 100μA
- Vgs (Max) :
- ±16V
- Rds On (Max) @ Id, Vgs :
- 6.8m Ω @ 50A, 10V
- Rise Time :
- 216ns
- Radiation Hardening :
- No
- Length :
- 6.73mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3779pF @ 50V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 143W Tc
- Turn-Off Delay Time :
- 43 ns
- Width :
- 6.22mm
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Breakdown Voltage :
- 60V
- Fall Time (Typ) :
- 96 ns
- Series :
- HEXFET®
- Power Dissipation :
- 143W
- Datasheets
- IRLR3636PBF
IRLR3636PBF Documents

N-Channel Tube 6.8m Ω @ 50A, 10V ±16V 3779pF @ 50V 49nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR3636PBF Description
IRLR3636PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 50V. The operating temperature of IRLR3636PBF is -55°C~175°C TJ and its maximum power dissipation is 143W. IRLR3636PBF has 3 pins and it is available in Tube packaging way. The Turn-On Delay Time of IRLR3636PBF is 45 ns and its Turn-Off Delay Time is 43 ns.
IRLR3636PBF Features
-
Optimized for Logic Level Drive
-
Very Low RDS(ON) at 4.5V VGS
-
Superior R*Q at 4.5V VGS
-
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
-
Fully Characterized Capacitance and Avalanche SOA
-
Enhanced body diode dV/dt and dI/dt Capability
-
Lead-Free
IRLR3636PBF Applications
-
DC Motor Drive
-
High-Efficiency Synchronous Rectification in SMPS
-
Uninterruptible Power Supply
-
High-Speed Power Switching
-
Hard Switched and High-Frequency Circuits
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