IRLR3636PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

96 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

45 ns

Lead Free :

Lead Free

Radiation Hardening :

No

REACH SVHC :

No SVHC

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 4.5V

Published :

2009

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±16V

Resistance :

6.8mOhm

Packaging :

Tube

Length :

6.73mm

Vgs(th) (Max) @ Id :

2.5V @ 100μA

Gate to Source Voltage (Vgs) :

16V

Input Capacitance (Ciss) (Max) @ Vds :

3779pF @ 50V

Rise Time :

216ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 50A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount

Number of Pins :

3

Turn-Off Delay Time :

43 ns

Continuous Drain Current (ID) :

99A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Series :

HEXFET®

Power Dissipation :

143W

Height :

2.39mm

Width :

6.22mm

Number of Elements :

1

Mounting Type :

Surface Mount

Power Dissipation-Max :

143W Tc

Threshold Voltage :

2.5V