IRLR2905ZTRLPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0135Ohm

Power Dissipation-Max :

110W Tc

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 5V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

55V

Series :

HEXFET®

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 36A, 10V

Published :

2004

Factory Lead Time :

10 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Terminal Position :

Single

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Drain Current-Max (Abs) (ID) :

42A

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Avalanche Energy Rating (Eas) :

85 mJ

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

240A

Vgs (Max) :

±16V

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-252AA

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

55V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier