IRLIB9343PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

Mount :

Through Hole

Fall Time (Typ) :

9.5 ns

Element Configuration :

Single

Series :

HEXFET®

Width :

4.826mm

Turn On Delay Time :

9.5 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

33W

Continuous Drain Current (ID) :

-14A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

-55V

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Current Rating :

-14A

FET Type :

P-Channel

Factory Lead Time :

14 Weeks

Height :

9.8mm

Drain to Source Breakdown Voltage :

-55V

Length :

10.6172mm

Operating Temperature :

-40°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

60A

Additional Feature :

High Reliability

Transistor Application :

SWITCHING

Voltage - Rated DC :

-55V

Published :

2004

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Drain to Source Voltage (Vdss) :

55V

Rise Time :

24ns

Case Connection :

Isolated

Packaging :

Tube

Resistance :

93mOhm

Threshold Voltage :

-1V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 50V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

Number of Pins :

3

Number of Elements :

1

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Turn-Off Delay Time :

21 ns

Lead Free :

Lead Free

Nominal Vgs :

-1 V

Power Dissipation-Max :

33W Tc

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB