IRLI630GPBF
- Mfr.Part #
- IRLI630GPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 6.2A TO220-3
- Stock
- 29,140
- In Stock :
- 29,140
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- TO-220-3
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 400mOhm @ 3.7A, 5V
- Drain to Source Breakdown Voltage :
- 200V
- Rise Time :
- 57ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Power Dissipation-Max :
- 35W Tc
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 200V
- Input Capacitance :
- 1.1nF
- Vgs (Max) :
- ±10V
- Current - Continuous Drain (Id) @ 25°C :
- 6.2A Tc
- Fall Time (Typ) :
- 33 ns
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 38 ns
- Packaging :
- Tube
- Number of Pins :
- 3
- Length :
- 10.63mm
- Drain to Source Resistance :
- 400mOhm
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- Factory Lead Time :
- 8 Weeks
- FET Type :
- N-Channel
- Weight :
- 6.000006g
- Continuous Drain Current (ID) :
- 6.2A
- Gate to Source Voltage (Vgs) :
- 10V
- Width :
- 4.83mm
- Threshold Voltage :
- 1V
- REACH SVHC :
- Unknown
- Min Operating Temperature :
- -55°C
- Resistance :
- 400mOhm
- Number of Channels :
- 1
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Turn On Delay Time :
- 8 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Rds On Max :
- 400 mΩ
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Height :
- 9.8mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Published :
- 2004
- Mount :
- Through Hole
- Datasheets
- IRLI630GPBF

N-Channel Tube 400mOhm @ 3.7A, 5V ±10V 1100pF @ 25V 40nC @ 10V 200V TO-220-3 Full Pack, Isolated Tab
IRLI630GPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1100pF @ 25V.This device conducts a continuous drain current (ID) of 6.2A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 38 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 400mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.Activation of any electrical operation happens at threshold voltage, and this transistor has 1V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 4V 5V volts (4V 5V).
IRLI630GPBF Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 400mOhm
a threshold voltage of 1V
a 200V drain to source voltage (Vdss)
IRLI630GPBF Applications
There are a lot of Vishay Siliconix
IRLI630GPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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