IRGS4062DPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Collector Emitter Voltage (VCEO) :

1.95V

Reverse Recovery Time :

89 ns

Power Dissipation :

250W

Height :

9.65mm

ECCN Code :

EAR99

Transistor Application :

POWER CONTROL

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

N-Channel

Td (on/off) @ 25°C :

41ns/104ns

Current - Collector Pulsed (Icm) :

96A

Max Collector Current :

48A

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

COLLECTOR

Width :

4.826mm

RoHS Status :

RoHS Compliant

Switching Energy :

115μJ (on), 600μJ (off)

Base Part Number :

IRGS4062DPBF

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

JESD-609 Code :

e3

IGBT Type :

Trench

Weight :

260.39037mg

Input Type :

Standard

Vce(on) (Max) @ Vge, Ic :

1.95V @ 15V, 24A

Mount :

Surface Mount

Gate Charge :

50nC

Factory Lead Time :

13 Weeks

Gate-Emitter Voltage-Max :

20V

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Number of Elements :

1

Turn On Time :

64 ns

Max Power Dissipation :

250W

Collector Emitter Breakdown Voltage :

600V

Length :

10.668mm

Number of Pins :

3

Gate-Emitter Thr Voltage-Max :

6.5V

Test Condition :

400V, 24A, 10 Ω, 15V

Published :

2009

Collector Emitter Saturation Voltage :

1.6V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Fall Time-Max (tf) :

41ns

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

164 ns