IRG7PH44K10D-EPBF

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Mfr.Part #
IRG7PH44K10D-EPBF
Manufacturer
International Rectifier
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT W/ULTRAFAST SOFT RECOVERY D
Stock
4,275
In Stock :
4,275

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Mounting Type :
Through Hole
Fall Time-Max (tf) :
115ns
Number of Pins :
3
RoHS Status :
RoHS Compliant
Collector Emitter Voltage (VCEO) :
2.4V
Power - Max :
320W
Rise Time-Max :
70ns
Test Condition :
600V, 25A, 10 Ω, 15V
Radiation Hardening :
No
Package / Case :
TO-247-3
Switching Energy :
2.1mJ (on), 1.3mJ (off)
Gate Charge :
200nC
Packaging :
Tube
Published :
2013
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reverse Recovery Time :
130 ns
ECCN Code :
EAR99
Max Power Dissipation :
320W
Current - Collector Pulsed (Icm) :
100A
Collector Emitter Breakdown Voltage :
1.2kV
Mount :
Through Hole
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 25A
Td (on/off) @ 25°C :
75ns/315ns
Polarity/Channel Type :
N-Channel
Gate-Emitter Thr Voltage-Max :
7.5V
Element Configuration :
Single
Input Type :
Standard
Voltage - Collector Emitter Breakdown (Max) :
1200V
Operating Temperature :
-40°C~150°C TJ
Max Collector Current :
70A
Datasheets
IRG7PH44K10D-EPBF
Introducing Transistors - IGBTs - Single International Rectifier IRG7PH44K10D-EPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-247-3, Operating Temperature:-40°C~150°C TJ, IRG7PH44K10D-EPBF pinout, IRG7PH44K10D-EPBF datasheet PDF, IRG7PH44K10D-EPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRG7PH44K10D-EPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRG7PH44K10D-EPBF


IRG7PH44K10D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG7PH44K10D-EPBF Description


IRG7PH44K10D-EPBF is a 1200v Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The Infineon IRG7PH44K10D-EPBF provides high efficiency in a wide range of applications, rugged transient performance, increased reliability, and excellent current sharing in parallel operation. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IRG7PH44K10D-EPBF is in the TO-247AD  package with 320W power dissipation.



IRG7PH44K10D-EPBF Features


Low VcE(ON) and switching losses

10μs Short Circuit SOA

Square RBSOA

Maximum Junction Temperature 150°C

Positive VcE ON) Temperature Coefficient



IRG7PH44K10D-EPBF Applications


Industrial Motor Drive

UPS

Communications equipment 

Wired networking 

Enterprise systems 

Datacenter & enterprise computing 

Personal electronics 

Portable electronics


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