IRG7PH30K10DPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Collector Emitter Saturation Voltage :

2.35V

Voltage - Collector Emitter Breakdown (Max) :

1200V

Fall Time-Max (tf) :

56ns

JESD-609 Code :

e3

Input Type :

Standard

Td (on/off) @ 25°C :

14ns/110ns

Length :

15.87mm

Element Configuration :

Single

Gate-Emitter Thr Voltage-Max :

7.5V

Published :

2009

Operating Temperature :

-55°C~150°C TJ

Gate Charge :

45nC

Peak Reflow Temperature (Cel) :

250

Transistor Application :

POWER CONTROL

Turn-Off Delay Time :

130 ns

Vce(on) (Max) @ Vge, Ic :

2.35V @ 15V, 9A

Case Connection :

COLLECTOR

Number of Elements :

1

Package / Case :

TO-247-3

Height :

20.7mm

Radiation Hardening :

No

Test Condition :

600V, 9A, 22 Ω, 15V

Lead Free :

Lead Free

Rise Time-Max :

41ns

Polarity/Channel Type :

N-Channel

Turn Off Time-Nom (toff) :

390 ns

Mounting Type :

Through Hole

Max Power Dissipation :

180W

Reverse Recovery Time :

140ns

Collector Emitter Voltage (VCEO) :

2.35V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Packaging :

Tube

Terminal Finish :

MATTE TIN OVER NICKEL

Collector Emitter Breakdown Voltage :

1.2kV

Switching Energy :

530μJ (on), 380μJ (off)

IGBT Type :

Trench

Turn On Delay Time :

23 ns

JEDEC-95 Code :

TO-247AC

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time :

34 ns

Power Dissipation :

180W

Max Collector Current :

30A

Number of Terminations :

3

Number of Pins :

3

Width :

5.3086mm

Current - Collector Pulsed (Icm) :

27A

Transistor Element Material :

SILICON