IRG4PC50KPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Thr Voltage-Max :

6V

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 30A

Additional Feature :

LOW CONDUCTION LOSS

Turn-Off Delay Time :

160 ns

Gate-Emitter Voltage-Max :

20V

Voltage - Rated DC :

600V

Current - Collector Pulsed (Icm) :

104A

Td (on/off) @ 25°C :

38ns/160ns

Packaging :

Bulk

Number of Terminations :

3

Max Collector Current :

52A

Collector Emitter Voltage (VCEO) :

2.2V

Turn Off Time-Nom (toff) :

430 ns

Switching Energy :

490μJ (on), 680μJ (off)

Element Configuration :

Single

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

250

Operating Temperature :

-55°C~150°C TJ

Current Rating :

52A

Number of Pins :

3

Transistor Application :

POWER CONTROL

Length :

15.875mm

JEDEC-95 Code :

TO-247AC

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Turn On Time :

72 ns

ECCN Code :

EAR99

Gate Charge :

200nC

Time@Peak Reflow Temperature-Max (s) :

30

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free

JESD-609 Code :

e3

Fall Time-Max (tf) :

120ns

Max Power Dissipation :

200W

Width :

5.3mm

Height :

20.3mm

Test Condition :

480V, 30A, 5 Ω, 15V

Mount :

Through Hole

Collector Emitter Breakdown Voltage :

600V

Collector Emitter Saturation Voltage :

1.84V

Package / Case :

TO-247-3

REACH SVHC :

No SVHC

Power Dissipation :

200W

Rise Time :

34ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Input Type :

Standard

Case Connection :

COLLECTOR

Factory Lead Time :

14 Weeks

Turn On Delay Time :

38 ns

Number of Elements :

1

RoHS Status :

RoHS Compliant

Published :

2000