IRG4PC50FDPBF
- Mfr.Part #
- IRG4PC50FDPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 70A 200W TO247AC
- Stock
- 100
- In Stock :
- 100
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Vce(on) (Max) @ Vge, Ic :
- 1.6V @ 15V, 39A
- JEDEC-95 Code :
- TO-247AC
- Current Rating :
- 70A
- Test Condition :
- 480V, 39A, 5 Ω, 15V
- Voltage - Rated DC :
- 600V
- Collector Emitter Breakdown Voltage :
- 600V
- Radiation Hardening :
- No
- Input Type :
- Standard
- Switching Energy :
- 1.5mJ (on), 2.4mJ (off)
- Turn On Time :
- 86 ns
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- Mount :
- Through Hole
- Termination :
- Through Hole
- Reverse Recovery Time :
- 50 ns
- Published :
- 2001
- Turn-Off Delay Time :
- 240 ns
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 1.6V
- Td (on/off) @ 25°C :
- 55ns/240ns
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Element Configuration :
- Single
- Length :
- 15.87mm
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Current - Collector Pulsed (Icm) :
- 280A
- Package / Case :
- TO-247-3
- Height :
- 20.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 14 Weeks
- Rise Time :
- 25ns
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 55 ns
- Turn Off Time-Nom (toff) :
- 660 ns
- Lead Free :
- Lead Free
- Gate Charge :
- 190nC
- Fall Time-Max (tf) :
- 210ns
- Max Collector Current :
- 70A
- Packaging :
- Tray
- Max Power Dissipation :
- 200W
- Power Dissipation :
- 200W
- Number of Elements :
- 1
- Width :
- 5.3086mm
- Transistor Application :
- POWER CONTROL
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRG4PC50FDPBF

IRG4PC50FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PC50FDPBF Description
The Infineon IRG4PC50FDPBF is an insulated gate Bipolar Transistor with ultrafast soft recovery diode, optimized for medium operating frequencies. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
IRG4PC50FDPBF Features
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO-247AC package
Lead-Free
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
IRG4PC50FDPBF Applications
Motor Drive & Control
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