IRG4PC30WPBF

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Mfr.Part #
IRG4PC30WPBF
Manufacturer
International Rectifier
Package / Case
TO-247-3
Datasheet
Download
Description
IRG4PC30W - IGBT
Stock
8,754
In Stock :
8,754

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Max Power Dissipation :
100W
REACH SVHC :
No SVHC
Package / Case :
TO-247-3
Polarity/Channel Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
2.7V
Gate Charge :
51nC
Radiation Hardening :
No
Voltage - Rated DC :
600V
Additional Feature :
LOW CONDUCTION LOSS
Terminal Position :
Single
Power Dissipation :
100W
Factory Lead Time :
14 Weeks
Test Condition :
480V, 12A, 23 Ω, 15V
Current Rating :
23A
Number of Terminations :
3
Weight :
38.000013g
Turn Off Time-Nom (toff) :
300 ns
Length :
15.875mm
Fall Time-Max (tf) :
100ns
Current - Collector Pulsed (Icm) :
92A
Gate-Emitter Thr Voltage-Max :
6V
ECCN Code :
EAR99
Lead Free :
Lead Free
Element Configuration :
Dual
Td (on/off) @ 25°C :
25ns/99ns
Switching Energy :
130µJ (on), 130µJ (off)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
5.3mm
Case Connection :
COLLECTOR
Max Collector Current :
23A
JEDEC-95 Code :
TO-247AC
Collector Emitter Saturation Voltage :
2.7V
Mounting Type :
Through Hole
Termination :
Through Hole
Gate-Emitter Voltage-Max :
20V
Collector Emitter Breakdown Voltage :
600V
Input Type :
Standard
Transistor Application :
POWER CONTROL
Rise Time :
16ns
Transistor Element Material :
SILICON
Packaging :
Bulk
Height :
20.2946mm
RoHS Status :
RoHS Compliant
Number of Pins :
3
Published :
2000
Vce(on) (Max) @ Vge, Ic :
2.7V @ 15V, 12A
Turn On Time :
41 ns
Number of Elements :
1
Datasheets
IRG4PC30WPBF
Introducing Transistors - IGBTs - Single International Rectifier IRG4PC30WPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, IRG4PC30WPBF pinout, IRG4PC30WPBF datasheet PDF, IRG4PC30WPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRG4PC30WPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



IRG4PC30WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

Description


The IRG4PC30WPBF is an Insulated Gate Bipolar Transistor (IGBT). An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.



Features


● 50% reduction of Eoff parameter

● Low IGBT conduction losses

● Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

● Lead-Free

● Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

● Industry-benchmark switching losses improve efficienty of all power supply topologies



Applications


● Switched-mode power supplies

● Traction motor control

● Induction heating

● AC and DC motor drives

● Solar inverters


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