IRG4PC30WPBF
- Mfr.Part #
- IRG4PC30WPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IRG4PC30W - IGBT
- Stock
- 8,754
- In Stock :
- 8,754
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Voltage - Rated DC :
- 600V
- Max Power Dissipation :
- 100W
- Packaging :
- Bulk
- Switching Energy :
- 130µJ (on), 130µJ (off)
- Rise Time :
- 16ns
- Gate Charge :
- 51nC
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 2.7V
- Package / Case :
- TO-247-3
- Radiation Hardening :
- No
- Additional Feature :
- LOW CONDUCTION LOSS
- Turn Off Time-Nom (toff) :
- 300 ns
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Current - Collector Pulsed (Icm) :
- 92A
- Max Collector Current :
- 23A
- Height :
- 20.2946mm
- Current Rating :
- 23A
- Width :
- 5.3mm
- Power Dissipation :
- 100W
- Gate-Emitter Voltage-Max :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Test Condition :
- 480V, 12A, 23 Ω, 15V
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Element Configuration :
- Dual
- Transistor Element Material :
- SILICON
- Fall Time-Max (tf) :
- 100ns
- Terminal Position :
- Single
- Published :
- 2000
- Factory Lead Time :
- 14 Weeks
- Collector Emitter Breakdown Voltage :
- 600V
- Gate-Emitter Thr Voltage-Max :
- 6V
- Weight :
- 38.000013g
- Termination :
- Through Hole
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-247AC
- Transistor Application :
- POWER CONTROL
- Turn On Time :
- 41 ns
- Lead Free :
- Lead Free
- Length :
- 15.875mm
- Td (on/off) @ 25°C :
- 25ns/99ns
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 12A
- Collector Emitter Voltage (VCEO) :
- 2.7V
- Input Type :
- Standard
- RoHS Status :
- RoHS Compliant
- Datasheets
- IRG4PC30WPBF
IRG4PC30WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
Description
The IRG4PC30WPBF is an Insulated Gate Bipolar Transistor (IGBT). An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
Features
● 50% reduction of Eoff parameter
● Low IGBT conduction losses
● Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
● Lead-Free
● Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
● Industry-benchmark switching losses improve efficienty of all power supply topologies
Applications
● Switched-mode power supplies
● Traction motor control
● Induction heating
● AC and DC motor drives
● Solar inverters
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