IRG4BC40WPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Td (on/off) @ 25°C :

27ns/100ns

Current - Collector Pulsed (Icm) :

160A

Turn On Delay Time :

27 ns

Input Type :

Standard

Additional Feature :

LOW CONDUCTION LOSS

Polarity/Channel Type :

N-Channel

Power Dissipation :

160W

Element Configuration :

Single

ECCN Code :

EAR99

Mounting Type :

Through Hole

Published :

2000

Fall Time-Max (tf) :

110ns

REACH SVHC :

No SVHC

Number of Elements :

1

Lead Free :

Contains Lead, Lead Free

Max Power Dissipation :

160W

Transistor Element Material :

SILICON

Current Rating :

40A

Collector Emitter Saturation Voltage :

2.5V

Radiation Hardening :

No

Number of Pins :

3

Packaging :

Tube

Case Connection :

COLLECTOR

Rise Time :

22ns

Gate-Emitter Thr Voltage-Max :

6V

Turn On Time :

49 ns

Gate Charge :

98nC

Collector Emitter Breakdown Voltage :

600V

Height :

8.77mm

Mount :

Through Hole

Input Capacitance :

1.9nF

Turn Off Time-Nom (toff) :

174 ns

Gate-Emitter Voltage-Max :

20V

Voltage - Rated DC :

600V

Factory Lead Time :

16 Weeks

Termination :

Through Hole

Max Collector Current :

40A

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Switching Energy :

110μJ (on), 230μJ (off)

Turn-Off Delay Time :

100 ns

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Width :

4.69mm

Transistor Application :

POWER CONTROL

Test Condition :

480V, 20A, 10 Ω, 15V

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 20A

Collector Emitter Voltage (VCEO) :

2.5V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.54mm