IRG4BC30U
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- Mfr.Part #
- IRG4BC30U
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 23A 100W TO220AB
- Stock
- 1,638
- In Stock ：
- 1,638
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Case Connection :
- COLLECTOR
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Time :
- 33 ns
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Published :
- 2000
- Number of Elements :
- 1
- Gate Charge :
- 50nC
- Package / Case :
- TO-220-3
- Transistor Application :
- POWER CONTROL
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 12A
- Td (on/off) @ 25°C :
- 17ns/78ns
- Turn Off Time-Nom (toff) :
- 320 ns
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- Current - Collector (Ic) (Max) :
- 23A
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- Input Type :
- Standard
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Test Condition :
- 480V, 12A, 23 Ω, 15V
- Additional Feature :
- ULTRA FAST SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Pulsed (Icm) :
- 92A
- Power - Max :
- 100W
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- Single
- Switching Energy :
- 160μJ (on), 200μJ (off)
- Datasheets
- IRG4BC30U
IRG4BC30U datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
Description
The IRG4BC30U is an insulated gate bipolar transistor. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
Features
? Generation 4 IGBTs offer the highest efficiency available
? IGBTs optimized for specified application conditions
? Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
? UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
? Industry standard TO-220AB package
Applications
? Power transistor
? Consumer electronics
? Industrial technology
? The energy sector
? Aerospace electronic devices
? Transportation
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