IRG4BC30KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Thr Voltage-Max :

6V

Number of Pins :

3

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Gate-Emitter Voltage-Max :

20V

Current - Collector Pulsed (Icm) :

56A

Radiation Hardening :

No

Published :

2000

Voltage - Rated DC :

600V

Termination :

Through Hole

Reverse Recovery Time :

42 ns

Power Dissipation :

100W

Switching Energy :

600μJ (on), 580μJ (off)

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Number of Terminations :

3

Turn Off Time-Nom (toff) :

370 ns

Additional Feature :

LOW CONDUCTION LOSS

Width :

4.69mm

Mount :

Through Hole

Turn On Delay Time :

60 ns

Test Condition :

480V, 16A, 23 Ω, 15V

Collector Emitter Breakdown Voltage :

600V

Mounting Type :

Through Hole

Current Rating :

28A

Number of Elements :

1

Max Collector Current :

28A

Transistor Application :

Motor Control

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Factory Lead Time :

16 Weeks

Collector Emitter Voltage (VCEO) :

2.7V

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 16A

Polarity/Channel Type :

N-Channel

Turn On Time :

100 ns

Max Power Dissipation :

100W

Rise Time :

42ns

Gate Charge :

67nC

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

2.21V

Fall Time-Max (tf) :

120ns

Td (on/off) @ 25°C :

60ns/160ns

Length :

10.5156mm

Height :

8.763mm

Turn-Off Delay Time :

160 ns

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Input Type :

Standard

Lead Free :

Lead Free