IRG4BC30FPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Termination :

Through Hole

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Turn-Off Delay Time :

200 ns

Transistor Application :

POWER CONTROL

Turn Off Time-Nom (toff) :

640 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time :

36 ns

Td (on/off) @ 25°C :

21ns/200ns

Current Rating :

31A

Gate Charge :

51nC

Width :

4.69mm

Package / Case :

TO-220-3

Number of Pins :

3

Length :

10.54mm

Fall Time-Max (tf) :

270ns

Input Type :

Standard

Switching Energy :

230μJ (on), 1.18mJ (off)

JEDEC-95 Code :

TO-220AB

Additional Feature :

FAST SPEED

Collector Emitter Saturation Voltage :

1.59V

Collector Emitter Breakdown Voltage :

600V

Current - Collector Pulsed (Icm) :

124A

Transistor Element Material :

SILICON

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

1.8V

Mount :

Through Hole

Test Condition :

480V, 17A, 23 Ω, 15V

Max Collector Current :

31A

Rise Time :

15ns

Lead Free :

Contains Lead, Lead Free

RoHS Status :

RoHS Compliant

Published :

2000

Factory Lead Time :

16 Weeks

Element Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 17A

Max Power Dissipation :

100W

Case Connection :

COLLECTOR

Voltage - Rated DC :

600V

Power Dissipation :

100W

Height :

8.77mm

Number of Terminations :

3

REACH SVHC :

No SVHC

Radiation Hardening :

No

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Turn On Delay Time :

21 ns