IRG4BC30FDPBF

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Mfr.Part #
IRG4BC30FDPBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
IRG4BC30 - DISCRETE IGBT WITH AN
Stock
33,533
In Stock :
33,533

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Number of Elements :
1
JEDEC-95 Code :
TO-220AB
Input Type :
Standard
Collector Emitter Voltage (VCEO) :
1.8V
Switching Energy :
630μJ (on), 1.39mJ (off)
Radiation Hardening :
No
Max Collector Current :
31A
Length :
10.54mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn Off Time-Nom (toff) :
620 ns
Max Power Dissipation :
100W
Mount :
Through Hole
Turn On Time :
69 ns
Polarity/Channel Type :
N-Channel
Published :
1998
Collector Emitter Saturation Voltage :
1.59V
Packaging :
Tube
Height :
8.77mm
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
600V
Gate Charge :
51nC
Gate-Emitter Thr Voltage-Max :
6V
Rise Time :
26ns
Test Condition :
480V, 17A, 23 Ω, 15V
Number of Pins :
3
REACH SVHC :
No SVHC
Power Dissipation :
100W
Mounting Type :
Through Hole
ECCN Code :
EAR99
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Transistor Application :
POWER CONTROL
Reverse Recovery Time :
42 ns
Current - Collector Pulsed (Icm) :
124A
Turn-Off Delay Time :
230 ns
Termination :
Through Hole
Transistor Element Material :
SILICON
Voltage - Rated DC :
600V
Width :
4.69mm
Lead Free :
Lead Free
Package / Case :
TO-220-3
Turn On Delay Time :
42 ns
Case Connection :
COLLECTOR
Factory Lead Time :
16 Weeks
Vce(on) (Max) @ Vge, Ic :
1.8V @ 15V, 17A
Current Rating :
31A
Td (on/off) @ 25°C :
42ns/230ns
Operating Temperature :
-55°C~150°C TJ
Gate-Emitter Voltage-Max :
20V
Datasheets
IRG4BC30FDPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4BC30FDPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, IRG4BC30FDPBF pinout, IRG4BC30FDPBF datasheet PDF, IRG4BC30FDPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4BC30FDPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4BC30FDPBF


IRG4BC30FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

Descriptions


The IRG4BC30FDPBF is a bipolar transistor featuring an ultrafast soft recovery diode and an insulated gate. It is designed to operate at medium operating frequencies of 1 to 5 kHz in hard switching mode and >20 kHz in resonant mode. In comparison to generation 3, the generation 4 IGBT design has a narrower parameter distribution and improved efficiency. For usage in bridge arrangements, the IGBT is co-packaged with HEXFRED? ultrafast, ultra-soft-recovery anti-parallel diodes. The HEXFRED? diodes have been tuned for use with IGBTs. Snubbing is required less or not at all when recovery qualities are minimized.



Features


● Optimized for specific application conditions

● Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

● IGBT co-packaged with HEXFREDTM ultrafast,

● Ultra-soft-recovery anti-parallel diodes for use in bridge configurations

● Industry-standard TO-220AB package

● Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).

● Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

● Lead-Free



Applications


● HVAC

● Consumer Electronics

● Power Management

● Switching

● Amplification

● Converters

● Automatic Switch


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