IRG4BC30FD1
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- Mfr.Part #
- IRG4BC30FD1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 31A 100W TO220AB
- Stock
- 37,436
- In Stock ：
- 37,436
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- JESD-30 Code :
- R-PSFM-T3
- JEDEC-95 Code :
- TO-220AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Time :
- 46 ns
- Polarity/Channel Type :
- N-Channel
- Input Type :
- Standard
- Switching Energy :
- 370μJ (on), 1.42mJ (off)
- Current - Collector Pulsed (Icm) :
- 120A
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vce(on) (Max) @ Vge, Ic :
- 1.8V @ 15V, 17A
- Power - Max :
- 100W
- Turn Off Time-Nom (toff) :
- 740 ns
- Published :
- 2003
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Test Condition :
- 480V, 17A, 23 Ω, 15V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 31A
- Case Connection :
- COLLECTOR
- Transistor Application :
- POWER CONTROL
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Gate Charge :
- 57nC
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Reverse Recovery Time :
- 46ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Td (on/off) @ 25°C :
- 22ns/250ns
- Package / Case :
- TO-220-3
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Datasheets
- IRG4BC30FD1
IRG4BC30FD1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4BC30FD1
Description
IGBTs are widely used as switching devices in the inverter circuit (for DC-to-AC conversion) for driving small to large motors. IGBTs for inverter applications are used in home appliances such as air conditioners and refrigerators, industrial motors, and automotive main motor controllers to improve their efficiency.
IRG4BC30FD1 Features
· Fast: optimized for medium operating frequencies
(1-5 kHz in hard switching.>20kHz in resonant mode). Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than Generation 3.
· IGBT co-packaged with Hyperfast FRED diodes for ultra low recovery characteristics.
*Industry standard TO-220AB package
IRG4BC30FD1 Applications
Communications:
u Point-of-sale terminals, web servers, multi-protocol bridges
n Industrial/Medical:
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