IRG4BC20WPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Turn On Time :

36 ns

Turn-Off Delay Time :

110 ns

Input Type :

Standard

Rise Time :

15ns

Packaging :

Tube

Current Rating :

13A

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

52A

Voltage - Rated DC :

600V

Polarity/Channel Type :

N-Channel

Terminal Position :

Single

Number of Pins :

3

Width :

4.69mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOW CONDUCTION LOSS

Case Connection :

COLLECTOR

Gate Charge :

26nC

Height :

8.77mm

Power Dissipation :

60W

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

Motor Control

Element Configuration :

Dual

Mount :

Through Hole

Gate-Emitter Voltage-Max :

20V

Td (on/off) @ 25°C :

22ns/110ns

Radiation Hardening :

No

Published :

2000

Max Collector Current :

13A

Collector Emitter Breakdown Voltage :

600V

Switching Energy :

60μJ (on), 80μJ (off)

Turn Off Time-Nom (toff) :

300 ns

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 6.5A

Gate-Emitter Thr Voltage-Max :

6V

ECCN Code :

EAR99

Max Power Dissipation :

60W

Collector Emitter Saturation Voltage :

2.6V

Test Condition :

480V, 6.5A, 50 Ω, 15V

Fall Time-Max (tf) :

96ns

Length :

10.54mm

Turn On Delay Time :

22 ns

Number of Terminations :

3

Number of Elements :

1

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

2.6V

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

16 Weeks