IRFU9220

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e0

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.2A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

FET Type :

P-Channel

Pbfree Code :

No

Drain to Source Voltage (Vdss) :

200V

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Terminal Position :

Single

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.5W Ta 42W Tc

Surface Mount :

No

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

3.6A

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSIP-T3

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Terminal Finish :

TIN LEAD