IRFU5505

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.11Ohm

Terminal Position :

Single

Power Dissipation-Max :

57W Tc

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

64A

Packaging :

Tube

Published :

1997

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

18A

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSIP-T3

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

110m Ω @ 9.6A, 10V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Mounting Type :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain to Source Voltage (Vdss) :

55V

FET Type :

P-Channel

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

55V

Peak Reflow Temperature (Cel) :

245

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

150 mJ

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA