IRFU5410PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 25V

RoHS Status :

ROHS3 Compliant

Lead Length :

9.65mm

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Lead Pitch :

2.28mm

Mount :

Through Hole

Nominal Vgs :

-4 V

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

260

Height :

6.22mm

Rds On (Max) @ Id, Vgs :

205m Ω @ 7.8A, 10V

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

52A

Continuous Drain Current (ID) :

-13A

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Current Rating :

-13A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Width :

2.3876mm

Number of Pins :

3

Length :

6.7056mm

Power Dissipation-Max :

66W Tc

Voltage - Rated DC :

-100V

Published :

1999

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

FET Type :

P-Channel

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Termination :

Through Hole

Power Dissipation :

66W

Number of Terminations :

3

Turn On Delay Time :

15 ns

Number of Elements :

1

Dual Supply Voltage :

-100V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

JESD-609 Code :

e3

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.205Ohm

Drain to Source Breakdown Voltage :

-100V

Turn-Off Delay Time :

45 ns

Fall Time (Typ) :

46 ns

Rise Time :

58ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

-4V

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V