IRFU5410

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

205m Ω @ 7.8A, 10V

Drain-source On Resistance-Max :

0.205Ohm

Case Connection :

DRAIN

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

100V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100V

Power Dissipation-Max :

66W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

52A

Avalanche Energy Rating (Eas) :

194 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Published :

1999

JESD-30 Code :

R-PSIP-T3

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

13A

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Packaging :

Tube

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE