IRFU5305PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Length :

9.65mm

Lead Free :

Contains Lead, Lead Free

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

-31A

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Published :

2004

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

110W Tc

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Voltage - Rated DC :

-55V

Rise Time :

66ns

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Lead Pitch :

2.28mm

Transistor Element Material :

SILICON

Number of Terminations :

3

Case Connection :

DRAIN

Radiation Hardening :

No

Turn On Delay Time :

14 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Rds On (Max) @ Id, Vgs :

65m Ω @ 16A, 10V

Resistance :

65mOhm

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

-55V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

25A

Threshold Voltage :

-4V

Length :

6.6mm

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Number of Pins :

3

Transistor Application :

SWITCHING

Element Configuration :

Single

Height :

6.1mm

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

55V

Current Rating :

-28A

Fall Time (Typ) :

63 ns

Nominal Vgs :

-4 V

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Avalanche Energy Rating (Eas) :

280 mJ

Power Dissipation :

89W

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Width :

2.3mm

Turn-Off Delay Time :

39 ns