IRFU422

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

7 A

Terminal Finish :

TIN LEAD

Manufacturer :

Rochester Electronics LLC

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

2.2A (Tc)

Number of Terminals :

3

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On, Min Rds On) :

10V

JESD-609 Code :

e0

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package :

Bulk

Power Dissipation (Max) :

50W (Tc)

Operating Temperature :

-55°C ~ 150°C (TJ)

JEDEC-95 Code :

TO-251AA

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

210 mJ

Surface Mount :

No

Drain to Source Voltage (Vdss) :

500 V

Supplier Device Package :

I-PAK

Terminal Form :

THROUGH-HOLE

Product Status :

Active

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

4 Ω

Vgs (Max) :

±20V

Series :

-

Input Capacitance (Ciss) (Max) @ Vds :

350 pF @ 25 V

DS Breakdown Voltage-Min :

500 V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

Pbfree Code :

No

Polarity/Channel Type :

N-Channel

FET Feature :

-

Gate Charge (Qg) (Max) @ Vgs :

19 nC @ 10 V

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

4Ohm @ 1.3A, 10V

Reach Compliance Code :

Unknown