IRFU420APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 25V

Transistor Application :

SWITCHING

Fall Time (Typ) :

13 ns

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Vgs (Max) :

±30V

Power Dissipation-Max :

83W Tc

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Number of Elements :

1

Width :

2.38mm

Height :

6.22mm

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

Rds On (Max) @ Id, Vgs :

3 Ω @ 1.5A, 10V

Number of Terminations :

3

Continuous Drain Current (ID) :

3.3A

Rise Time :

12ns

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Case Connection :

DRAIN

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

329.988449mg

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Power Dissipation :

83W

Length :

6.73mm

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Threshold Voltage :

4.5V

Packaging :

Tube

Published :

2015

Drain-source On Resistance-Max :

3Ohm

Nominal Vgs :

4.5 V

REACH SVHC :

Unknown

Pin Count :

3

DS Breakdown Voltage-Min :

500V

Number of Pins :

3

Turn-Off Delay Time :

16 ns

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Drain to Source Voltage (Vdss) :

500V

Turn On Delay Time :

8.1 ns

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No