IRFU4105

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Drain to Source Voltage (Vdss) :

55V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Transistor Element Material :

SILICON

Power Dissipation-Max :

68W Tc

Avalanche Energy Rating (Eas) :

29 mJ

RoHS Status :

Non-RoHS Compliant

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Terminations :

3

Mounting Type :

Through Hole

JESD-30 Code :

R-PSIP-T3

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

30A

JESD-609 Code :

e3

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

120A

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Drain-source On Resistance-Max :

0.0245Ohm

ECCN Code :

EAR99

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Published :

1998

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

DS Breakdown Voltage-Min :

55V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

45m Ω @ 16A, 10V